Title :
Time-resolved photoluminescence and optical gain of Ga(NAsP) heterostructures pseudomorphically grown on silicon (001) substrate
Author :
Gerhardt, Nils C. ; Koukourakis, Nektarios ; Klimasch, Max ; Funke, Dominic A. ; Hofmann, Martin R. ; Kunert, Bernardette ; Liebich, Sven ; Trusheim, Daniel ; Zimprich, Martin ; Volz, Kerstin ; Stolz, Wolfgang
Author_Institution :
Photonics & Terahertz Technol., Ruhr-Univ. Bochum, Bochum, Germany
Abstract :
The novel metastable dilute nitride material Ga(NAsP) is a very promising candidate for electrically pumped lasers on silicon because it can be pseudomorphically grown on silicon substrate. Here we investigate the optical properties of a series of multi-quantum well Ga(NAsP) samples grown lattice matched on GaP and Si substrates. Temperature and excitation resolved photoluminescence spectroscopy indicates a significant impact of disorder-induced carrier localization effects on the optical properties. On the other hand, optical gain measurements reveal high modal gain up to 80 cm-1 at room temperature and demonstrate the suitability of this new material as an active material for laser devices. A comparative analysis of optical gain and photoluminescence data demonstrates a strong impact of the barrier-growth conditions on the optical quality of the material.
Keywords :
III-V semiconductors; gallium arsenide; optical materials; optical variables measurement; photoluminescence; semiconductor quantum wells; time resolved spectra; wide band gap semiconductors; Ga(NAsP); GaP; GaP substrates; Si; active material; barrier-growth conditions; disorder-induced carrier localization; electrically pumped lasers; excitation resolved photoluminescence spectroscopy; lattice matching; metastable dilute nitride material; modal gain; multiquantum well; optical gain measurements; optical quality; pseudomorphically grown heterostructures; silicon (001) substrate; temperature resolved photoluminescence spectroscopy; time-resolved photoluminescence; Integrated optics; Optical pumping; Photoluminescence; Silicon; Substrates; Temperature measurement; optical gain; semiconductor lasers; silicon photonics dilute nitrides; time-resolved photoluminescence;
Conference_Titel :
Transparent Optical Networks (ICTON), 2011 13th International Conference on
Conference_Location :
Stockholm
Print_ISBN :
978-1-4577-0881-7
Electronic_ISBN :
2161-2056
DOI :
10.1109/ICTON.2011.5970794