Title :
A study of field dependence of TDDB of ultra-thin gate oxide and anomaly in the I-V of MOS devices with active guard ring
Author :
Yassine, Abdullah ; Nariman, H. ; Olasupo, Kola ; Govea, Laura
Author_Institution :
Quality & Reliability Eng, AMD, Austin, TX, USA
Abstract :
In this paper, we present, the results of a study of time dependent dielectric breakdown (TDDB) of ultra-thin gate oxide (<40 Å) for a wide range of oxide fields 4.3<Eox<9 MV/cm at high temperatures. In addition, we report on an anomaly that we observed in the I-V of MOS devices when a negative voltage sweep is applied to the gate while the other terminals (substrate and active area) are grounded
Keywords :
MIS devices; electric breakdown; I-V characteristics; MOS device; active guard ring; time dependent dielectric breakdown; ultrathin gate oxide; Acceleration; Degradation; Dielectric breakdown; Electric breakdown; Integrated circuit modeling; MOS devices; Predictive models; Temperature; Tunneling; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1998. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4881-8
DOI :
10.1109/IRWS.1998.745362
