Title :
Electrical properties of polyimide Langmuir-Blodgett films sandwiched between metal and superconducting electrodes
Author :
Iwamoto, Mitsumasa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
The electrical properties of thermally stable multilayer Langmuir-Blodgett (LB) films of polyimide (PI) were examined for cases of Al/PI/Al, Au/PI/Au and Au/PI/(Pb-Bi) junctions. The monolayer thickness of the multilayer PI LB films was about 0.4 nm, and Pb-Bi is a superconducting electrode. The authors also fabricated Nb/Au/PI/(Pb-Bi) Josephson junctions, and examined the electrical properties of the junctions at a temperature of 4.2 K. For Nb/Au/PI/(Pb-Bi) junctions, the typical I-V characteristic for a weakly coupled superconductor was seen. For Au/PI/Au junctions, it was concluded that PI LB layers become good electrically insulating barriers when the number of deposited layers is greater than about 30. For Al/PI/Al junctions, it is shown that an aluminum native oxide layer formed on the base Al electrode makes a significant contribution to the electrical conduction through the PI layer
Keywords :
Josephson effect; Langmuir-Blodgett films; electronic conduction in insulating thin films; polymer films; superconducting junction devices; 4.2 K; Al; Au; Au-PbBi; I-V characteristic; Josephson junctions; Nb-Au-PbBi; electrical properties; electrically insulating barriers; monolayer thickness; native oxide layer; polyimide Langmuir-Blodgett films; thermally stable; weakly coupled superconductor; Dielectrics and electrical insulation; Electrodes; Gold; Josephson junctions; Niobium; Nonhomogeneous media; Polyimides; Superconducting epitaxial layers; Superconducting films; Temperature;
Conference_Titel :
Electrical Insulation, 1990., Conference Record of the 1990 IEEE International Symposium on
Conference_Location :
Toronto, Ont.
DOI :
10.1109/ELINSL.1990.109710
