Fully Integrated Millimeter-Wave VCO with 32% Tuning Range

Author

Liu, Gang ; Chartier, Sébastien ; Trasser, Andreas ; Schumacher, Hermann

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg im Breisgau

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

1

Lastpage

4

Abstract

In this paper, the authors present a fully integrated VCO with 32% tuning range centered at 38.9 GHz. The VCO was designed using a commercially available, inexpensive 0.8 mum Si/SiGe HBT technology with f_T and f_max of 80 and 90 GHz, respectively. It consumes 195 mW DC power and provides an output power of more than 5 dBm. A phase noise of -93 dBc/Hz at 1 MHz offset was measured for the free running VCO.

Keywords

Ge-Si alloys; bipolar MIMIC; circuit tuning; elemental semiconductors; heterojunction bipolar transistors; integrated circuit noise; millimetre wave bipolar transistors; millimetre wave oscillators; phase noise; semiconductor device noise; silicon; voltage-controlled oscillators; Si-SiGe; Si-SiGe HBT technology; dc power; frequency 38.9 GHz; frequency 80 GHz; frequency 90 GHz; fully integrated millimeter-wave VCO; phase noise; power 195 mW; tuning; Circuit optimization; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; Substrates; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-3940-9

Electronic_ISBN

978-1-4244-2831-1

Type

conf

DOI

10.1109/SMIC.2009.4770489

Filename

4770489