• DocumentCode
    2557073
  • Title

    C-V Measurements - And Its Implication On Oxide, Transistor And Non-volatile Memory Cell Reliability

  • Author

    Schwalke, Udo ; Gordon, Bart

  • fYear
    1998
  • fDate
    15-15 Oct. 1998
  • Firstpage
    97
  • Lastpage
    98
  • Keywords
    Capacitance-voltage characteristics; Current measurement; Doping; Frequency measurement; Nonvolatile memory; Quantum capacitance; Testing; Thickness measurement; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 1998. IEEE International
  • Conference_Location
    Lake Tahoe, CA, USA
  • Print_ISBN
    0-7803-4881-8
  • Type

    conf

  • DOI
    10.1109/IRWS.1998.745378
  • Filename
    745378
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2557073