Title :
Equilibrium-controlled static C-V method and its applications
Author :
Schwalke, Udo ; Gruensfelder, Christian ; Kerber, Martin
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
Abstract :
In this work, we present an equilibrium-controlled static C-V technique, which takes advantage of an adaptive gate-voltage sweep. The relaxation time of the MOS system to achieve equilibrium and provides additional useful information
Keywords :
MIS devices; capacitance measurement; elemental semiconductors; semiconductor device measurement; silicon; MOS system; Si; adaptive gate-voltage sweep; equilibrium; equilibrium-controlled static C-V technique; relaxation time; Capacitance-voltage characteristics; Delay effects; Feedback loop; MOS capacitors; MOSFETs; Monitoring; Temperature dependence; Temperature measurement; Time measurement; Voltage control;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1998. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4881-8
DOI :
10.1109/IRWS.1998.745380
