LSMO Thin Film Tunability Characterization Integrated on Silicon Substrate

Author

Al Ahmad, Mahmoud ; Lee, Young Taek ; Cheon, Chae Il ; Yun, Eui-Jung ; Plana, Robert

Author_Institution

Univ. of Toulouse, Toulouse

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

1

Lastpage

3

Abstract

LSMO thin films materials have a strong interaction between their electrical and magnetic properties that could be translated into innovative tunable components. The knowledge of the electroactive and magnetoactive properties of these materials is essential for modeling and design of their novel based- devices. The activity of these materials can be described by their electro/magento resistance and magneto capacitance. 400 nm thick LSMO thin film is formed by the chemical solution deposition (CSD). Under electrostatic field, it is assumed that electric current flowing through narrow low resistance path induces intense local magnetic field, resulting in the decrease of film resistance. This letter reports for the tunability of the LSMO resistance versus frequency.

Keywords

circuit tuning; electromagnetic devices; lanthanum compounds; magnetic thin films; magnetoresistive devices; silicon; strontium compounds; (La_0.67Sr_0.33)MnO₃-Si; LSMO thin film tunability; chemical solution deposition; electric current; electro-magentoresistance; electrostatic field; film resistance; magneto capacitance; silicon substrate; size 400 nm; Capacitance; Electric resistance; Magnetic devices; Magnetic films; Magnetic materials; Magnetic properties; Semiconductor thin films; Silicon; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-3940-9

Electronic_ISBN

978-1-4244-2831-1

Type

conf

DOI

10.1109/SMIC.2009.4770502

Filename

4770502