Title :
3D Group-Cross Symmetrical Interleaved Inductor in Advanced 45 nm RF CMOS Technology: A New Compact Inductor Architecture improving Self-Resonance Frequency
Author :
Gianesello, F. ; Gloria, D.
Author_Institution :
STMicroelectronics, TR&D/STD/TPS/ECR, Crolles
Abstract :
High Performance on-chip inductor is a key enabling element of monolithic RF circuits and radio frequency (RF) system-on-chip. Generally, on chip inductor are planar devices but 3D symmetrical spiral interleaved inductor (3DSII) has been proposed [1] to lower the amount of area consumed by inductor. This paper presents a novel 3D group-cross symmetrical spiral interleaved inductor (3DGCSII), which has higher self-resonance frequency (SRF) and occupies the same layout area as 3DSII. Measurement data of 3DGCSI and 3DSII, achieved using STMicroelectronics Low Power 45 nm RF CMOS technology, are here compared with each other to show the advantages of this new inductor structure.
Keywords :
CMOS integrated circuits; MMIC; inductors; low-power electronics; system-on-chip; 3D group-cross symmetrical interleaved inductor; STMicroelectronics low power RF CMOS technology; compact inductor architecture; high-performance on-chip inductor; monolithic RF circuits; radio frequency system-on-chip; self-resonance frequency; size 45 nm; CMOS technology; Circuits; Inductors; Q factor; Radio frequency; Resonance; Resonant frequency; Silicon; Spirals; System-on-a-chip;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3940-9
Electronic_ISBN :
978-1-4244-2831-1
DOI :
10.1109/SMIC.2009.4770503
