DocumentCode :
2557272
Title :
Nonlinear Behavior of CRF Device at High Power Level
Author :
Mourot, L. ; Bar, P. ; Giry, A. ; Joblot, S. ; Parat, G. ; Bila, S. ; Carpentier, J.-F.
Author_Institution :
CNRS, Univ. de Limoges, Albert
fYear :
2009
fDate :
19-21 Jan. 2009
Firstpage :
1
Lastpage :
4
Abstract :
This paper investigates the nonlinear behavior of CRF filters. First, measurements carried out on stand-alone resonators underline the impact of resonator size and loading layer thickness on linearity. Then, a comparison between a BAW filter and a CRF filter is presented regarding second order nonlinearities. Finally, the nonlinear behavior of CRF filters at high power levels has been investigated through co-integration of the CRF with a silicon PA in order to evaluate its impact in a WCDMA application.
Keywords :
acoustic resonator filters; bulk acoustic wave devices; nonlinear filters; silicon; BAW filter; CRF device; Si; WCDMA application; bulk acoustic wave filter; coupled resonator filter; high-power levels; nonlinear behavior; second order nonlinearity; silicon PA; Dielectrics; Frequency conversion; Linearity; Multiaccess communication; Nonlinear filters; Power harmonic filters; Resonator filters; Silicon; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3940-9
Electronic_ISBN :
978-1-4244-2831-1
Type :
conf
DOI :
10.1109/SMIC.2009.4770504
Filename :
4770504
Link To Document :
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