Title :
A K-Band nMOS SPDT Switch and Phase Shifter Implemented in 130nm SiGe BiCMOS Technology
Author :
Saha, Prabir K. ; Comeau, Jonathan P. ; Kuo, Wei-Min Lance ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
The design and performance of optimized K-band nMOS SPDT switches and a switched-line 180deg single-bit phase shifter are presented. The design demonstrates the use of low insertion loss nMOSFET switches in 130 nm silicon-germanium (SiGe) BiCMOS technology. Design and layout optimization approaches for MOSFET based series-shunt, single-pole double-throw (SPDT) switches have been investigated. The designed switches use deep trench substrate isolation and have an insertion loss of 2 dB and isolation better than 15 dB up to 20 GHz. The 180deg 1-bit phase shifter, built from these switches and delay lines shows an insertion loss of 4.5 plusmn 0.5 dB at 20 GHz while maintaining input and output reflection coefficients better than -15 dB.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect transistor switches; phase shifters; K-band nMOS SPDT switch; SiGe; SiGe BiCMOS technology; insertion loss; low insertion loss nMOSFET switches; output reflection coefficients; phase shifter; switched-line 180deg single-bit phase shifter; wavelength 130 nm; BiCMOS integrated circuits; Design optimization; Germanium silicon alloys; Insertion loss; K-band; MOS devices; MOSFET circuits; Phase shifters; Silicon germanium; Switches;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3940-9
Electronic_ISBN :
978-1-4244-2831-1
DOI :
10.1109/SMIC.2009.4770508
