Title :
Cryogenic RF Small-Signal Modeling and Parameter Extraction of SiGe HBTs
Author :
Xu, Ziyan ; Niu, Guofu ; Luo, Lan ; Chakraborty, Partha S. ; Cheng, Peng ; Thomas, Dylan ; Cressler, John D.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL
Abstract :
In this paper RF small-signal modeling of SiGe HBTs was presented and its variation with biasing current, voltage and temperatures were discussed especially with the cryogenic temperatures. Direct extraction process and a two-step hot-after-cold optimization were successfully fitted with 1 to 35 GHz Y-parameters. The cryogenic RF circuit and equivalent circuit parameters were examined for its temperature dependence performances.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; cryogenic electronics; equivalent circuits; heterojunction bipolar transistors; microwave circuits; BiCMOS technology; HBTs; SiGe; Y-parameters; biasing current; cryogenic RF small-signal modeling; equivalent circuit parameters; frequency 1 GHz to 35 GHz; parameter extraction; temperature dependence performances; two-step hot-after-cold optimization; Capacitance; Carbon capture and storage; Cryogenics; Data mining; Equivalent circuits; Germanium silicon alloys; Parameter extraction; Radio frequency; Silicon germanium; Temperature distribution;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3940-9
Electronic_ISBN :
978-1-4244-2831-1
DOI :
10.1109/SMIC.2009.4770509
