• DocumentCode
    2557462
  • Title

    Bismuth incorporation and lattice contraction in GaSbBi and InSbBi

  • Author

    Wang, Shumin ; Song, Yuxin ; Roy, Ivy Saha

  • Author_Institution
    Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Göteborg, Sweden
  • fYear
    2011
  • fDate
    26-30 June 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.
  • Keywords
    III-V semiconductors; X-ray diffraction; bismuth; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; GaSbBi; InSbBi; X-ray diffraction; bismuth incorporation; lattice contraction; molecular beam epitaxy; Atomic measurements; Bismuth; Bonding; Lattices; Molecular beam epitaxial growth; Shape; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Transparent Optical Networks (ICTON), 2011 13th International Conference on
  • Conference_Location
    Stockholm
  • ISSN
    2161-2056
  • Print_ISBN
    978-1-4577-0881-7
  • Electronic_ISBN
    2161-2056
  • Type

    conf

  • DOI
    10.1109/ICTON.2011.5970830
  • Filename
    5970830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2557462