DocumentCode
2557648
Title
A Thin-Film SOI 180nm CMOS RF Switch
Author
Wolf, R. ; Joseph, A. ; Botula, A. ; Slinkman, J.
Author_Institution
IBM Microelectron., Essex Junction, VT
fYear
2009
fDate
19-21 Jan. 2009
Firstpage
1
Lastpage
4
Abstract
This paper describes a single pole, single throw (SPST) 180 nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching times are competitive with switch applications utilizing GaAs pHEMT and silicon- on-sapphire technologies.
Keywords
CMOS integrated circuits; elemental semiconductors; microwave switches; semiconductor switches; silicon; silicon-on-insulator; CMOS; RF Switch; Si; insertion loss; isolation times; linearity; power handling; size 180 nm; switching times; thin-film SOI; CMOS technology; Communication switching; FETs; Gallium arsenide; Insertion loss; Radio frequency; Silicon on insulator technology; Switches; Transistors; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location
San Diego, CA
Print_ISBN
978-1-4244-3940-9
Electronic_ISBN
978-1-4244-2831-1
Type
conf
DOI
10.1109/SMIC.2009.4770520
Filename
4770520
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