DocumentCode
2557676
Title
The preparation of SiGe thermoelectric materials by mechanical alloying
Author
Cook, B.A. ; Beaudry, B.J. ; Harringa, J.L. ; Barnett, W.J.
Author_Institution
Ames Lab., Iowa State Univ., Ames, IA, USA
fYear
1989
fDate
6-11 Aug 1989
Firstpage
693
Abstract
The preparation of SiGe thermoelectric materials by mechanical alloying was studied. This technique has the advantage of producing homogeneous, fine-grained alloys at room temperature. Optical metallography and electronic microscopy have indicated that the average particle/grain size of the alloys produced is considerably less than 1 μm. X-ray diffraction measurements have verified alloy formation in these materials. Electrical resistivity, Seebeck coefficient, and thermal diffusivity have been measured on several hot pressed compacts and the results are compared with conventional state-of-the-art SiGe alloys. Of four preliminary samples studied, a maximum figure-of-merit of 0.88×10-3 C-1 at 900°C was found
Keywords
Ge-Si alloys; semiconductor materials; thermoelectric conversion; Seebeck coefficient; SiGe thermoelectric materials; X-ray diffraction measurements; electrical resistivity; electronic microscopy; homogeneous fine-grained alloys; mechanical alloying; optical metallography; semiconductor; thermal diffusivity; Alloying; Electron microscopy; Germanium silicon alloys; Grain size; Optical materials; Optical microscopy; Silicon germanium; Temperature; Thermoelectricity; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings of the 24th Intersociety
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IECEC.1989.74542
Filename
74542
Link To Document