A Thin-Film SOI 180nm CMOS RF Switch Technology

Author

Botula, A. ; Joseph, A. ; Slinkman, J. ; Wolf, R. ; He, Z.-X. ; Ioannou, D. ; Wagner, L. ; Gordon, M. ; Abou-Khalil, M. ; Phelps, R. ; Gautsch, M. ; Abadeer, W. ; Harmon, D. ; Levy, M. ; Benoit, J. ; Dunn, J.

Author_Institution

IBM Microelectron., Essex Junction, VT

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

1

Lastpage

4

Abstract

This paper describes a 180 nm CMOS thin film SOI technology developed for RF switch applications. For the first time we show that the well-known harmonic generation issue in HRES SOI technologies can be suppressed with one additional mask. Power handling, linearity, and Ron*Coff product are competitive with GaAs pHEMT and silicon-on-sapphire technologies.

Keywords

CMOS integrated circuits; elemental semiconductors; harmonic generation; microwave switches; semiconductor switches; silicon; silicon-on-insulator; thin film devices; CMOS RF switch; Ron*Coff product; Si; harmonic generation; linearity; power handling; size 180 nm; thin-film SOI technology; CMOS technology; Frequency conversion; Gallium arsenide; Isolation technology; Radio frequency; Silicon on insulator technology; Space technology; Substrates; Switches; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-3940-9

Electronic_ISBN

978-1-4244-2831-1

Type

conf

DOI

10.1109/SMIC.2009.4770522

Filename

4770522