Advances in Silicon-On-Insulator Cellular Antenna Switch Technology

Silicon-on-insulator technology utilizing very high resistivity handle wafers demonstrates sufficient performance for many cellular handset requirements. Technologies with either thin or thick device layers show promise. Thick-SOI prototype single pole six throw switch (SP6T) P_{-0.1 dB} of about 40 dBm and -75 dBc harmonic at 35 dBm output have been demonstrated at 900 MHz. Thin-SOI Ron-Coff product similar to that of pHEMT has been demonstrated experimentally. Obstacles such as distortion caused by Si-SiO₂ interfaces remain a fascinating engineering challenge to fully exploit the opportunity.