Linearity Analysis of Laterally Graded Channel in RF Power MOSFETs

Author

Chen, Chia-Yu ; Tornblad, Olof G. ; Dutton, Robert W.

Author_Institution

Center for Integrated Syst., Stanford Univ., Stanford, CA, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

1497

Lastpage

1500

Abstract

Advanced harmonic balance simulation capabilities have been used to investigate linearity behavior in RF power LDMOS devices with different laterally graded channel doping profiles. Harmonic balance analysis provides relevant device information from device-level simulations and yield performance metrics of RF circuits. The linearity behavior of a simple quasi-1D structures with different graded channel doping profiles was investigated; the analysis was then extended to a more realistic power LDMOS device. The third-order intermodulation distortion product (IM3) reveals the important role of the lateral channel doping in RF power LDMOS. The analysis lays ground-work for device optimization for improved linearity.

Keywords

circuit optimisation; power MOSFET; radiofrequency integrated circuits; semiconductor doping; RF power MOSFET; channel doping; device optimization; device-level simulations; harmonic balance analysis; laterally graded channel; linearity analysis; third-order intermodulation distortion; Analytical models; Circuit simulation; Doping profiles; Harmonic analysis; Information analysis; Linearity; MOSFETs; Performance analysis; Power system harmonics; Radio frequency; LDMOS; Linearity; channel engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165992

Filename

5165992