Title :
A Ka-band high-power protection switch with open/short-stub selectable circuits
Author :
Hangai, Masatake ; Nakahara, Kazuhiko ; Yamaguchi, Mamiko ; Hieda, Morishige
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
A Ka-band high-power protection switch has been developed. Our invented circuit utilized new open/short-stub selectable circuit. By using this configuration, the gate widths of the FETs and the power handling capability at transmitting mode can be independently determined. So the circuit can keep low insertion loss at receiving mode while maintaining high power performance at transmitting mode. To verily this methodology, we have fabricated an MMIC switch, and the circuit has achieved the insertion loss of 2 dB, the isolation of 25 dB, and the power handling capability of 38 dBm at 5% bandwidth of Ka-band.
Keywords :
MMIC; field effect transistors; microwave switches; FET; Ka-band high-power protection switch; MMIC switch; open/short-stub selectable circuits; Distributed parameter circuits; FETs; Frequency; Insertion loss; Millimeter wave transistors; Optical switches; Power transmission lines; Protection; Switching circuits; Voltage; FET; MMIC; high-power; switch;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165996