Fast first-run silicon repair cases by laser chemical vapor deposition of copper from Cu(hfac)tmvs

The fast-turnaround ASIC prototype series must be brought into market quickly. Unfortunately, it is often noticed that, despite through simulations, design flaws are introduced into these circuits. The reason for the failure is either in the design or in some processing error. These flaws may usually be corrected by redesigning the layout and putting the IC through a semiconductor fabrication process again which is costly and time consuming. In this work LCVD of copper from Cu(hfac)tmvs has been utilised for the restructuring of IC interconnections. Copper lines were deposited onto passivated ICs in order to achieve new local interconnections between IC structures. The resistivities of the deposited lines were found to be close to copper bulk resistivity. The utilisation of Nd:YAG and XeCl excimer lasers in the cutting of conductor lines is also described. Special practical IC repair case problems and solutions carried out by LCVD system are presented