• DocumentCode
    2558055
  • Title

    High-rate deposition of high-quality CdTe films for high-efficiency solar cells

  • Author

    Bonnet, Dieter ; Henrichs, Beate ; Richter, Hilmar

  • Author_Institution
    Battelle Inst. eV, Frankfurt am Main, Germany
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1165
  • Abstract
    CdTe/CdS heterojunction solar cells of 11% efficiency have been produced by close-spaced sublimation of highly oriented large-grain p-CdTe films at a deposition-rate of above 5 μm/min in a nitrogen-ambient at a pressure of 10-1 mbar, using a very thin evaporated n-CdS film. Internal quantum efficiencies are close to 100% over a broad spectral range. A realistic potential of >15% is estimated for this cell
  • Keywords
    II-VI semiconductors; cadmium compounds; p-n heterojunctions; semiconductor thin films; solar cells; vapour deposition; 11 percent; CdTe-CdS; close-spaced sublimation; heterojunction solar cells; quantum efficiencies; semiconductor thin films; vapour deposition; Absorption; Costs; Doping; Lattices; Optical films; Photovoltaic cells; Radiative recombination; Semiconductor materials; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169394
  • Filename
    169394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2558055