DocumentCode :
2558077
Title :
Migration of impurities from semicon shield through PE insulation under various experimental conditions
Author :
Belhadfa, A. ; Houdayer, A. ; Hinrichsen, P.F. ; Kajrys, G. ; Crine, J.-P. ; Noirhomme, B.
Author_Institution :
Lab. de Phys. Nucl., Montreal Univ., Que., Canada
fYear :
1990
fDate :
3-6 Jun 1990
Firstpage :
321
Lastpage :
325
Abstract :
Micro-PIXE (proton-induced X-ray emission) has been used to measure the depth profiles of impurities migrating from heavily contaminated semiconducting shield into extra-clean HMW-polyethylene. Measurements were made as a function of time, temperature, and the environment, as well as on samples subjected to an AC field of about 5 kV/mm. The impurity migration varied with time and was found to depend on the presence of water. The AC field was found to affect the migration of some impurities but not that of others
Keywords :
X-ray chemical analysis; cable insulation; insulation testing; ion microprobe analysis; materials testing; organic insulating materials; polymers; power cables; AC field; depth profiles of impurities; environment; extra-clean HMW-polyethylene; function of time; heavily contaminated semiconducting shield; impurity migration; micro-PIXE; polyethylene insulation; presence of water; proton-induced X-ray emission; temperature; Cable insulation; Impurities; Mechanical factors; Pollution measurement; Polyethylene; Protons; Temperature; Time measurement; Trees - insulation; Underwater cables;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation, 1990., Conference Record of the 1990 IEEE International Symposium on
Conference_Location :
Toronto, Ont.
ISSN :
1089-084X
Type :
conf
DOI :
10.1109/ELINSL.1990.109764
Filename :
109764
Link To Document :
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