Effect of Ga and P dopants on the thermoelectric properties of n-type SiGe

Author

Draper, S.L. ; Vandersande, J.W. ; Wood, C. ; Masters, R. ; Raag, V.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

fYear

1989

fDate

6-11 Aug 1989

Firstpage

711

Abstract

The purpose of this study was to hot-press improved n-type Si₈₀Ge₂₀/GaP samples directly (without any heat treatment) and to confirm that a Ga/P ratio less than one increases the solubility of P and, hence, improves the power factor and Z. One of the three sample (Ga/P=0.43) had an improvement in Z of about 20% between 400 and 1000°C over that for standard SiGe. This demonstrates that improved samples can be pressed directly and that a Ga/P ratio less than one is necessary. The other two samples (Ga/P=0.33 and 0.50) and Z´s equal to or less than that of standard SiGe but had a lower hot-pressing temperature than the improved sample

Keywords

Ge-Si alloys; gallium; phosphorus; semiconductor materials; thermoelectric conversion; 1000 degC; Si₈₀Ge₂₀:Ga,P thermoelectric materials; hot-pressing temperature; n-type semiconductor; power factor; Conductivity measurement; Electrons; Energy measurement; Germanium silicon alloys; Microstructure; Reactive power; Silicon germanium; Space technology; Thermal conductivity; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings of the 24th Intersociety

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IECEC.1989.74545

Filename

74545