• DocumentCode
    2558198
  • Title

    An Investigation of the Large-Signal RF Safe-Operating-Area on Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications

  • Author

    Grens, Curtis M. ; Cheng, Peng ; Cressler, John D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
  • fYear
    2009
  • fDate
    19-21 Jan. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents analysis of RF safe-operating- area of aggressively-biased cascode SiGe HBT power amplifier cores under large-signal operating conditions. It is demonstrated that as VC and |ZL| increase, the RF power threshold to cause catastrophic device failure is reduced. Comparisons between calculated results and measured data show excellent agreement.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; power amplifiers; RF power; SiGe; aggressively-biased cascode SiGe HBTs; large-signal RF safe-operating-area; power amplifier applications; Breakdown voltage; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Power engineering and energy; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Virtual colonoscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-4244-3940-9
  • Electronic_ISBN
    978-1-4244-2831-1
  • Type

    conf

  • DOI
    10.1109/SMIC.2009.4770543
  • Filename
    4770543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2558198