A generic Reverse Conducting IGBT structure for monolithic switching cells integration

A generic structure of a Reverse Conducting IGBT (RC-IGBT) that integrates monolithically an IGBT for the forward conduction and a self-firing thyristor for the reverse conduction is proposed. As compared to the conventional RC-IGBT, the structure that we propose doesn´t exhibit snap-back in the forward conducting mode [1], [2]. The static and dynamic performances of the structure are investigated in this paper by 2D Sentaurus™ numerical simulations. The proposed structure is then used to design two complementary monolithic power chips, named “Common Anode three-pole” and “Common Cathode three-pole”, within the context of “two-chip” integration of static power converter [4]. These two chips are then associated to form a complete inverter. The proposed three-pole common cathode chip uses a P⁺ wall for insulation between the two adjacent RC-IGBT sections. The proposed elementary RC-IGBT uses also the P⁺ wall in order to ensure the thyristor triggering in the reverse conducting mode.