Stability of iridium oxide films in high temperature, 200-250 degrees , solutions

Author

Kreider, K. ; Tarlov, M.

Author_Institution

Center for Chem. Technol., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

1990

fDate

4-7 June 1990

Firstpage

42

Lastpage

43

Abstract

The stability of reactively sputtered iridium oxide films on alumina substrates on exposure to pH 4, 7, and 10 solutions at 200 degrees C and 250 degrees C is examined. The exposures were made in a Teflon-lined bomb. The results of over 50 tests, cycling pH between 2 and 10 before and after exposure, are discussed. Changes of E degrees , the formed potential, and the slope were most severe under acidic conditions at 250 degrees C. The most severe conditions also caused film breakdown and loss of adhesion to the substrate. The incorporation of ion-assisted deposition in the fabrication of the films led to improved adherence under the most severe conditions of exposure. The results indicated similar behavior for films deposited at 500 K (crystalline) and those deposited at room temperature (amorphous).<>

Keywords

electric sensing devices; iridium compounds; pH measurement; sputter deposition; sputtered coatings; 200 to 250 degC; Al/sub 2/O/sub 3/; IrO/sub 2/-Al/sub 2/O/sub 3/; Teflon-lined bomb; acidic conditions; adhesion; film breakdown; formed potential; ion-assisted deposition; reactively sputtered films; Adhesives; Amorphous materials; Crystallization; Electric breakdown; Fabrication; Stability; Substrates; Temperature; Testing; Weapons;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensor and Actuator Workshop, 1990. 4th Technical Digest., IEEE

Conference_Location

Hilton Head Island, SC, USA

Type

conf

DOI

10.1109/SOLSEN.1990.109816

Filename

109816