1 W, Highly Efficient, Ultra-Broadband Non-Uniform Distributed Power Amplifier in GaN

This letter describes the design and implementation of a highly linear, ultra-broadband non-uniform asymmetric distributed MMIC power amplifier in GaN, delivering 1 W of output power and suitable for operation at frequencies up to 6.5 GHz. The GaN HFETs used here have a gate length of 500 nm, and breakdown-voltages exceeding 100 V while exhibiting an f_T of approximately 30 GHz. A non-uniform asymmetric distributed topology is used to achieve ultra-broadband performance. CW measurements carried out at nominal bias between 0.5 GHz and 6.5 GHz yielded a maximum PAE of 38.1% at 0.5 GHz, with PAE higher than 20% over the entire band, while achieving P_out > 30 dBm.