An analytical drain current model for undoped 4-T asymmetric double gate MOSFETs

Author

Syamal, Binit ; Saha, Manas ; Mohankumar, N. ; Sarkar, C.K.

Author_Institution

Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India

fYear

2009

fDate

1-2 June 2009

Firstpage

1

Lastpage

4

Abstract

In this paper, we derive an analytical model of drain current for an Undoped 4-T asymmetric double gate MOSFET based on the solution of the 1D Poisson´s equation. The equations are valid for both the subthreshold and superthreshold regime of operation. The current is formulated using the Pao-Sah´s double integral method. The model can be used to study the effect of the different gate voltages, gate work functions and the oxide thickness of the front and back gate on the drain current of the undoped DG MOSFET. The results have been verified with a 2D device simulator and a good agreement is obtained.

Keywords

MOSFET; Poisson equation; integral equations; Pao-Sah double integral method; Poisson equation; drain current model; undoped 4-T asymmetric double gate MOSFET; Analytical models; CMOS technology; Electron devices; Electrostatics; FETs; MOSFETs; Poisson equations; Semiconductor process modeling; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-3831-0

Electronic_ISBN

978-1-4244-3832-7

Type

conf

DOI

10.1109/EDST.2009.5166092

Filename

5166092