Title :
From millibits to terabits per second and beyond - Over 60 years of innovation
Author_Institution :
William Hansen Hall Dept. of Electr. & Comput. Eng., Univ. of Louisiana at Lafayette, Lafayette, LA, USA
Abstract :
Three innovations responsible for an explosive growth in available information bandwidth over the last 30 years are highlighted. These include the invention of the bipolar and MOS transistors, development of information theory and the invention of solid-state lasers. Although demonstrated 13 years later than the bipolar transistors, fundamental contributions that led to rapid adoption of MOS as the technology of choice in meeting the needs of wireless and lightwave communication systems is explained. Continued research in understanding and improving MOSFET noise performance is elucidated. Theoretical basis of ultra-low-noise optical signal detection using finite medium and non-instantaneous multiplication are presented.
Keywords :
MOSFET; semiconductor device noise; MOS transistor; MOSFET noise performance; bipolar transistor; finite medium; information bandwidth; information theory; lightwave communication systems; noninstantaneous multiplication; solid state lasers; ultra-low-noise optical signal detection; wireless communication systems; Bandwidth; Bipolar transistors; Communication systems; Explosives; Information theory; MOSFET circuits; Optical noise; Solid lasers; Technological innovation; Wireless communication; BJT; Lightwave communication; MOSFET; finite-medium avalanching; laser; noise; non-instantaneous multiplication; photodetector; wireless communication;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
DOI :
10.1109/EDST.2009.5166093