• DocumentCode
    2559050
  • Title

    From millibits to terabits per second and beyond - Over 60 years of innovation

  • Author

    Jindal, R.P.

  • Author_Institution
    William Hansen Hall Dept. of Electr. & Comput. Eng., Univ. of Louisiana at Lafayette, Lafayette, LA, USA
  • fYear
    2009
  • fDate
    1-2 June 2009
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Three innovations responsible for an explosive growth in available information bandwidth over the last 30 years are highlighted. These include the invention of the bipolar and MOS transistors, development of information theory and the invention of solid-state lasers. Although demonstrated 13 years later than the bipolar transistors, fundamental contributions that led to rapid adoption of MOS as the technology of choice in meeting the needs of wireless and lightwave communication systems is explained. Continued research in understanding and improving MOSFET noise performance is elucidated. Theoretical basis of ultra-low-noise optical signal detection using finite medium and non-instantaneous multiplication are presented.
  • Keywords
    MOSFET; semiconductor device noise; MOS transistor; MOSFET noise performance; bipolar transistor; finite medium; information bandwidth; information theory; lightwave communication systems; noninstantaneous multiplication; solid state lasers; ultra-low-noise optical signal detection; wireless communication systems; Bandwidth; Bipolar transistors; Communication systems; Explosives; Information theory; MOSFET circuits; Optical noise; Solid lasers; Technological innovation; Wireless communication; BJT; Lightwave communication; MOSFET; finite-medium avalanching; laser; noise; non-instantaneous multiplication; photodetector; wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-3831-0
  • Electronic_ISBN
    978-1-4244-3832-7
  • Type

    conf

  • DOI
    10.1109/EDST.2009.5166093
  • Filename
    5166093