• DocumentCode
    2559132
  • Title

    Using Non-Volatile RAM as a Write Buffer for NAND Flash Memory-based Storage Devices

  • Author

    Park, Sungmin ; Jung, Hoyoung ; Shim, Hyoki ; Sooyong Kang ; Cha, Jaehyuk

  • Author_Institution
    Div. of Inf. & Commun., Hanyang Univ., Seoul
  • fYear
    2008
  • fDate
    8-10 Sept. 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Recent development of next generation non-volatile memory types such as MRAM, FeRAM and PRAM provide higher commercial value to Non-Volatile RAM (NVRAM). In this paper, we suggest the utilization of small-sized, next-generation NVRAM as a write buffer to improve the overall performance of NAND flash memory-based storage systems. We propose a novel block-based NVRAM write buffer management policy, CLC. Simulation results show that the CLC policy outperforms the traditional policies.
  • Keywords
    buffer storage; flash memories; random-access storage; NAND flash memory; cold-largest cluster policy; generation NVRAM; nonvolatile RAM; storage device; write buffer management policy; Buffer storage; Costs; Delay effects; Delay estimation; Flash memory; Hard disks; Nonvolatile memory; Random access memory; Read-write memory; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Modeling, Analysis and Simulation of Computers and Telecommunication Systems, 2008. MASCOTS 2008. IEEE International Symposium on
  • Conference_Location
    Baltimore, MD
  • ISSN
    1526-7539
  • Print_ISBN
    978-1-4244-2817-5
  • Electronic_ISBN
    1526-7539
  • Type

    conf

  • DOI
    10.1109/MASCOT.2008.4770591
  • Filename
    4770591
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2559132