Thermally oxidized LPCVD silicon as gate dielectric on GaN

Author

Sreenidhi, T. ; DasGupta, Amitava ; DasGupta, Nandita

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India

fYear

2009

fDate

1-2 June 2009

Firstpage

1

Lastpage

4

Abstract

A two step gate dielectric deposition technique on GaN, viz. thermal oxidation of Low Pressure Chemical Vapor Deposited (LPCVD) silicon is reported. Current-Voltage (I-V) and Capacitance-Voltage (C-V) characterization of the Metal Insulator Semiconductor (MIS) capacitors are carried out to assess the interface properties. MIS devices with thermal oxide show improved I-V characteristics compared to those with Plasma Enhanced Chemical Vapor Deposited (PECVD) SiO₂. However, Si deposition and oxidation schedule has to be carefully optimized to achieve high quality SiO₂ on GaN.

Keywords

III-V semiconductors; MIS capacitors; chemical vapour deposition; gallium compounds; oxidation; silicon compounds; MIS capacitor; SiO₂-GaN; capacitance-voltage (C-V) characterization; current-voltage characterization; gate dielectric deposition technique; low pressure chemical vapor deposition; metal insulator semiconductor; thermally oxidized LPCVD silicon; Capacitance-voltage characteristics; Capacitors; Chemicals; Dielectrics and electrical insulation; Gallium nitride; MIS devices; Metal-insulator structures; Oxidation; Plasma chemistry; Silicon; Gate leakage; Interface states; MIS capacitors; Non-uniform oxidation; Pseudo-inversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-3831-0

Electronic_ISBN

978-1-4244-3832-7

Type

conf

DOI

10.1109/EDST.2009.5166103

Filename

5166103