DocumentCode :
2559269
Title :
Numerical investigation of excess RF channel noise in sub-100 nm MOSFETs
Author :
Mahajan, Vinayak M. ; Jindal, R.P. ; Shichijo, Hisashi ; Martin, S. ; Hou, Fan-Chi ; Trombley, Django
Author_Institution :
Univ. of Louisiana at Lafayette, Lafayette, LA, USA
fYear :
2009
fDate :
1-2 June 2009
Firstpage :
1
Lastpage :
4
Abstract :
High-frequency simulations of channel-thermal noise in MOSFETs with gate-lengths of 40 nm, 80 nm, and 110 nm are presented. The simulated noise parameter gamma is a stronger function of the carrier transport model at shorter gate-lengths. Velocity saturation is necessary to produce a good match between the simulated and measured DC I-V characteristics using either the drift-diffusion or hydrodynamic transport models. However, in the presence of velocity saturation, the simulated noise is insufficient in explaining the observed excess noise. Hence, these physics-based device-level simulations point to the presence of a non-thermal RF noise source in the FET channel.
Keywords :
MOSFET; simulation; thermal noise; MOSFET; RF channel noise; carrier transport model; channel-thermal noise; drift-diffusion; high-frequency simulations; hydrodynamic transport; velocity saturation; CMOS technology; Circuit noise; Circuit simulation; Degradation; High definition video; Hydrodynamics; Impedance; MOSFETs; Radio frequency; Semiconductor device noise; CLM; carrier heating; device simulation; diffusion noise; drift-diffusion; excess channel noise; hydrodynamic; impedance-field method (IFM);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
Type :
conf
DOI :
10.1109/EDST.2009.5166104
Filename :
5166104
Link To Document :
بازگشت