Global CD uniformity improvement using dose modulation pattern correction of pattern density-dependent and position-dependent errors

Author

Chen, Chia-Jen ; Lee, Hsin-Chang ; Yeh, Lee-Chih ; Liu, Kai-Chung ; Lien, Ta-Cheng ; Chuo, Yi-Chun ; Hsieh, Hung-Chang ; Lin, Bum J.

Author_Institution

Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan

fYear

2004

fDate

9-10 Sept. 2004

Firstpage

95

Lastpage

98

Abstract

The specification of mask global CD uniformity (GCDU) is ever tightening. There is no exception at the 65-nm node. Some of the key contributors affecting GCD non-uniformity are pattern-density effects such as fagging effect from the e-beam writer and macro loading effect from the etcher. In addition, the contributions from position-dependent effects are significant, and these contributions included resist developing, baking, as well as aberrations of the wafer-imaging lens. It is challenging to quantify these effects and even more so to correct them to improve the GCDU. Correction of the fogging and etch loading effects had been reported by various authors. In addition to correction for these effects, we are reporting the position-dependent effects in this paper.

Keywords

error correction; etching; integrated circuit manufacture; masks; resists; dose modulation pattern correction; e-beam writer; etch loading effect; fagging effect; global CD uniformity; macro loading effect; pattern density-dependent error; pattern-density effects; position-dependent error; resist baking; resist developing; wafer-imaging lens; Degradation; Error correction; Etching; Lenses; Lithography; Manufacturing industries; Optical imaging; Optical modulation; Resists; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Technology Workshop Proceedings, 2004

Print_ISBN

0-7803-8469-5

Type

conf

DOI

10.1109/SMTW.2004.1393734

Filename

1393734