DocumentCode
2559379
Title
The use of silicon technology for an electret microphone construction
Author
Sprenkels, A.J. ; Bergveld, P.
Author_Institution
Twente Technol. Transfer, Enschede, Netherlands
fYear
1988
fDate
1-3 Sep 1988
Firstpage
593
Lastpage
597
Abstract
The authors present a subminiature electret microphone which has been realized in silicon using wafer processing techniques. The microphone consists of two conducting plates which form a capacitor. The lower plate (backplate) is rigid and fabricated in silicon. The upper plate (diaphragm) consists of a 6-μm-thick metallized Mylar foil. In the air cavity between both plates a 1-μm-thick silicon dioxide electret is present. The fabrication process, such as the construction of the silicon backplate, the realization of the electret, and the diaphragm attachment, are described. The microphones measure 3-mm×3-mm×3-mm and show a sensitivity of 1.4 mV/μbar and a frequency response within ±1 dB up to 15 kHz
Keywords
electrets; microphones; silicon; Si wafer processing; SiO2 electret; capacitor; diaphragm attachment; fabrication; frequency response; metallized Mylar foil; sensitivity; subminiature electret microphone; subminiature microphone; Air gaps; Capacitance; Capacitors; Electrets; Electric resistance; Electrodes; Metallization; Microphones; Silicon compounds; Technology transfer;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1988. (ISE 6) Proceedings., 6th International Symposium on (IEEE Cat. No.88CH2593-2)
Conference_Location
Oxford
Type
conf
DOI
10.1109/ISE.1988.38636
Filename
38636
Link To Document