• DocumentCode
    2559379
  • Title

    The use of silicon technology for an electret microphone construction

  • Author

    Sprenkels, A.J. ; Bergveld, P.

  • Author_Institution
    Twente Technol. Transfer, Enschede, Netherlands
  • fYear
    1988
  • fDate
    1-3 Sep 1988
  • Firstpage
    593
  • Lastpage
    597
  • Abstract
    The authors present a subminiature electret microphone which has been realized in silicon using wafer processing techniques. The microphone consists of two conducting plates which form a capacitor. The lower plate (backplate) is rigid and fabricated in silicon. The upper plate (diaphragm) consists of a 6-μm-thick metallized Mylar foil. In the air cavity between both plates a 1-μm-thick silicon dioxide electret is present. The fabrication process, such as the construction of the silicon backplate, the realization of the electret, and the diaphragm attachment, are described. The microphones measure 3-mm×3-mm×3-mm and show a sensitivity of 1.4 mV/μbar and a frequency response within ±1 dB up to 15 kHz
  • Keywords
    electrets; microphones; silicon; Si wafer processing; SiO2 electret; capacitor; diaphragm attachment; fabrication; frequency response; metallized Mylar foil; sensitivity; subminiature electret microphone; subminiature microphone; Air gaps; Capacitance; Capacitors; Electrets; Electric resistance; Electrodes; Metallization; Microphones; Silicon compounds; Technology transfer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1988. (ISE 6) Proceedings., 6th International Symposium on (IEEE Cat. No.88CH2593-2)
  • Conference_Location
    Oxford
  • Type

    conf

  • DOI
    10.1109/ISE.1988.38636
  • Filename
    38636