Title :
Formation of ohmic contacts to n-GaAs via heterojunction by using indium and gold
Author :
Yee, WaiFai ; Naseem, H.A.
Author_Institution :
Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA
Abstract :
Ohmic contacts with contact resistivity of the order of M Omega -cm/sup 2/, have been successfully fabricated by deposition of a thin film of gold and indium on a clean GaAs surface followed by annealing. An annealing temperature as low as 280 degrees C can be used to achieve this result. Increasing the annealing temperature to 350 degrees C reduces the required annealing time to only 12 seconds.<>
Keywords :
III-V semiconductors; annealing; contact resistance; gallium arsenide; gold; indium; ohmic contacts; semiconductor-metal boundaries; 12 s; 280 to 350 C; Au-GaAs; GaAs surface; In-GaAs; annealing temperature; annealing time; contact resistivity; heterojunction; ohmic contact formation; Annealing; Conductivity; Gallium arsenide; Gold; Heterojunctions; Indium; Ohmic contacts; Sputtering; Surface cleaning; Temperature;
Conference_Titel :
Electronics Components Conference, 1988., Proceedings of the 38th
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/ECC.1988.12657
