Bulk and interfacial dielectric response of dysprosium and ytterbium oxide thin capacitors

Author

Wiktorczyk, T.

Author_Institution

Inst. of Phys., Tech. Univ. of Wroclaw, Poland

fYear

1988

fDate

1-3 Sep 1988

Firstpage

607

Lastpage

611

Abstract

Capacitance, dielectric permittivity and losses are presented as a function of temperature, frequency, DC voltage, insulator thickness, and electrode material for Dy₂O₃ and Yb₂O ₃ thin films deposited in MIM (metal-insulator-metal) sandwiches. Results show that both volumes of the dielectric films as well as the M/I interfaces (Schottky barriers) are responsible for the dielectric response of these capacitors

Keywords

Schottky effect; dielectric losses; dysprosium compounds; interface phenomena; metal-insulator-metal devices; permittivity; thin film capacitors; ytterbium compounds; DC voltage dependence; Dy₂O₃; Schottky barriers; Yb₂O₃; bulk dielectric response; dielectric permittivity; electret; electrode dependence; frequency dependence; interfacial dielectric response; metal-insulator-metal capacitor; temperature dependence; thickness dependence; thin capacitors; Capacitance; Dielectric losses; Dielectric materials; Dielectric thin films; Dielectrics and electrical insulation; Electrodes; Frequency; Permittivity; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 1988. (ISE 6) Proceedings., 6th International Symposium on (IEEE Cat. No.88CH2593-2)

Conference_Location

Oxford

Type

conf

DOI

10.1109/ISE.1988.38639

Filename

38639