Title :
Bulk and interfacial dielectric response of dysprosium and ytterbium oxide thin capacitors
Author_Institution :
Inst. of Phys., Tech. Univ. of Wroclaw, Poland
Abstract :
Capacitance, dielectric permittivity and losses are presented as a function of temperature, frequency, DC voltage, insulator thickness, and electrode material for Dy2O3 and Yb2O 3 thin films deposited in MIM (metal-insulator-metal) sandwiches. Results show that both volumes of the dielectric films as well as the M/I interfaces (Schottky barriers) are responsible for the dielectric response of these capacitors
Keywords :
Schottky effect; dielectric losses; dysprosium compounds; interface phenomena; metal-insulator-metal devices; permittivity; thin film capacitors; ytterbium compounds; DC voltage dependence; Dy2O3; Schottky barriers; Yb2O3; bulk dielectric response; dielectric permittivity; electret; electrode dependence; frequency dependence; interfacial dielectric response; metal-insulator-metal capacitor; temperature dependence; thickness dependence; thin capacitors; Capacitance; Dielectric losses; Dielectric materials; Dielectric thin films; Dielectrics and electrical insulation; Electrodes; Frequency; Permittivity; Temperature; Voltage;
Conference_Titel :
Electrets, 1988. (ISE 6) Proceedings., 6th International Symposium on (IEEE Cat. No.88CH2593-2)
Conference_Location :
Oxford
DOI :
10.1109/ISE.1988.38639
