Influence of SiN composition on program and erase characteristics of SANOS-type flash memories

Author

Sandhya, C. ; Ganguly, U. ; Apoorva, B. ; Olsen, C. ; Seutter, S. ; Date, L. ; Hung, R. ; Vasi, J. ; Mahapatra, S.

Author_Institution

Dept. of Electr. Eng., IIT Bombay, Mumbai, India

fYear

2009

fDate

1-2 June 2009

Firstpage

1

Lastpage

4

Abstract

Composition of the silicon-nitride charge trap layer strongly impacts electron and hole trap properties. This significantly impacts charge trap flash memory performance and reliability. Important trade-offs between program/erase (P/E) levels (memory window) and retention loss is shown and critical trends identified. Increasing the Si-richness of the SiN layer improves memory window by increasing erase efficiency. E-state retention characteristics are improved but at the expense of higher P-state retention loss.

Keywords

charge injection; electron traps; flash memories; hole traps; nitrogen; silicon compounds; SANOS-type flash memory; SiN; charge trap; electron property; erase efficiency; hole trap property; memory window; program/erase level; retention loss; Aluminum oxide; Capacitors; Charge carrier processes; Electron traps; Flash memory; Implants; Silicon compounds; Temperature dependence; Thickness measurement; Wavelength measurement; Charge Trap Flash; Data Retention; Program-Erase window; SANOS; Silicon Nitride;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-3831-0

Electronic_ISBN

978-1-4244-3832-7

Type

conf

DOI

10.1109/EDST.2009.5166111

Filename

5166111