DocumentCode
2559608
Title
In-line inspection on thickness of sputtered HfO2 and Hf metal ultra-thin films by spectroscopic ellipsometry
Author
Chuo, Y. ; Shu, D.Y. ; Lee, L.S. ; Hsieh, W.Y. ; Tsai, M.J. ; Wang, A. ; Hung, S.B. ; Tzeng, P.J. ; Chou, Y.W.
Author_Institution
ERSO, Ind. Technol. Res. Inst., Hsinchu
fYear
2004
fDate
10-10 Sept. 2004
Firstpage
119
Lastpage
122
Abstract
HfO2-based dielectrics are most promising high k materials to substitute SiO2 for the MOS gate dielectric. To guarantee the deposition process under well control, an in-line inspection to characterize the thickness and uniformity of both HfO2 and Hf metal ultra-thin films must be established. In this work, we proposed an in-line, non-destructive optical method to measure thickness of both films, and this method has potential to be inducted into production control. Upon spectroscopic ellipsometry (SE), reactive DC sputtered HfO2 and Hf metal ultra-thin films with featured-thickness of 40 Aring or larger were well analyzed, and accuracy of wafer mapping measurement fell in 3 Aring
Keywords
dielectric thin films; ellipsometry; hafnium compounds; inspection; metallic thin films; nondestructive testing; semiconductor device manufacture; sputter deposition; thickness measurement; 40 A; Hf; Hf metal ultra-thin film; HfO2; MOS gate dielectric; deposition process; nondestructive optical method; spectroscopic ellipsometry; thickness in-line inspection; wafer mapping measurement; Dielectric measurements; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Inspection; Optical films; Process control; Production control; Thickness control; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Technology Workshop Proceedings, 2004
Conference_Location
Hsinchu
Print_ISBN
0-7803-8469-5
Type
conf
DOI
10.1109/SMTW.2004.1393742
Filename
1393742
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