Physics based modeling of non-quasi-static effects in SiGe-HBTs

Author

Jacob, Jobymol ; DasGupta, Amitava ; Chakravorty, Anjan

Author_Institution

Dept. of Electr. Eng., IIT Madras, Chennai, India

fYear

2009

fDate

1-2 June 2009

Firstpage

1

Lastpage

4

Abstract

A physics based model for the non-quasi-static (NQS) effects occurring in heterojunction bipolar transistors (HBTs) is presented. Following classical transistor theory, partitioned charge based (PCB) approach is extended to additionally model small-signal frequency-dependent (trans-) conductances. A new large-signal model is implemented in Verilog-A, and is tested for small-signal behavior. Results are compared with numerical device simulation, and its improvement is checked against the results obtained from PCB approach and widely used 2^nd order LCR sub-circuit.

Keywords

heterojunction bipolar transistors; semiconductor device models; silicon compounds; 2nd order LCR subcircuit; PCB approach; SiGe-HBTs; Verilog-A; classical transistor theory; heterojunction bipolar transistors; nonquasistatic effects; numerical device simulation; partitioned charge based approach; physics based modeling; small-signal frequency-dependent transconductances; Capacitance; Circuit simulation; Delay effects; Electron devices; Equations; Frequency; Hardware design languages; Heterojunction bipolar transistors; Jacobian matrices; Physics; LCR subcircuits; NQS effects; PCB model; SiGe-HBTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-3831-0

Electronic_ISBN

978-1-4244-3832-7

Type

conf

DOI

10.1109/EDST.2009.5166125

Filename

5166125