DocumentCode
2559984
Title
Low-voltage semiconductor topology for kV pulse generation using a leakage flux corrected step-up transformer
Author
Redondo, L.M. ; Margato, E. ; Silva, J. Fernando
Author_Institution
Inst. Superior de Engenharia de Lisbon, Portugal
Volume
1
fYear
2000
fDate
2000
Firstpage
326
Abstract
This paper introduces a new circuit to obtain high voltage (kV) pulsed power supplies suitable for plasma ion implantation. Using a step-up transformer with a leakage flux reduction winding, and taking advantage of the low duty ratio required, 800 V semiconductor switches can be used to obtain 5 kV 10 kHz pulses. Theoretical and experimental results are presented
Keywords
magnetic flux; magnetic leakage; power semiconductor switches; power transformers; pulsed power supplies; pulsed power switches; transformer windings; 10 kHz; 5 kV; 800 V; LV semiconductor topology; duty ratio; kV pulse generation; leakage flux corrected step-up transformer; leakage flux reduction winding; plasma ion implantation; pulsed power supplies; semiconductor switches; Circuits; Clamps; Plasma immersion ion implantation; Power semiconductor switches; Power transformer insulation; Pulse generation; Pulse transformers; Pulsed power supplies; Topology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location
Galway
ISSN
0275-9306
Print_ISBN
0-7803-5692-6
Type
conf
DOI
10.1109/PESC.2000.878870
Filename
878870
Link To Document