An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter

Author

Tolstoy, Georg ; Ranstad, Per ; Colmenares, Juan ; Peftitsis, Dimosthenis ; Giezendanner, Florian ; Rabkowski, Jacek ; Nee, H.-P.

Author_Institution

Electr. Energy Conversion, KTH R. Inst. of Technol., Stockholm, Sweden

fYear

2014

fDate

26-28 Aug. 2014

Firstpage

1

Lastpage

10

Abstract

Active control of the dead-time in a SLR converter is in this paper shown to be of great importance. The efficiency of the full-bridge will increase if the dead-time control is made in the right way. Different control algorithms are shown to work well for different power switches. For the SiC MOSFET and the SiC BJT the control algorithms are tested experimentally.

Keywords

MOSFET; bipolar transistors; delays; losses; resonant power convertors; silicon compounds; SLR converter; SiC; SiC BJT; SiC MOSFET; bipolar junction transistor; dead-time active control algorithm; experimental analysis; full-bridge efficiency; high-frequency resonant converter; loss; metal-oxide-semiconductor field-effect transistor; power switch; series-loaded resonant converter; Capacitance; Frequency modulation; Insulated gate bipolar transistors; MOSFET; Silicon; Silicon carbide; Snubbers; Converter control; High frequency power converter; Resonant converter; Silicon Carbide (SiC); Soft switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on

Conference_Location

Lappeenranta

Type

conf

DOI

10.1109/EPE.2014.6911042

Filename

6911042