Modeling of quantum mechanical effects in ultra-thin body nanoscale double-gate FinFET

A framework for modeling of quantum mechanical effects in the ultra-thin body Nanoscale double-gate (DG) FinFET is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body electrodes, thus the potential is obtained as a solution of the 2D Laplace equation with the help of conformal mapping techniques. In the near-threshold regime, we have solved the Poisson´s equation using quantum-mechanical charge density, in the gate-to-gate direction to model the total potential.