• DocumentCode
    256011
  • Title

    New aspects on analyzing ZVS conditions for converters using super-junction Si and wide bandgap SiC and GaN power FETs

  • Author

    Miftakhutdinov, Rais

  • Author_Institution
    Texas Instrum. Inc., Cary, NC, USA
  • fYear
    2014
  • fDate
    26-28 Aug. 2014
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    Paper analyzes substantial Coss behavior differences of FETs using super-junction Si, SiC and GaN technologies versus traditional Si process and suggests new practical models for power losses optimization. These models applied to derive normalized ZVS conditions and boundaries for popular PWM ZVS topologies allowing efficiency optimization at wide operating conditions.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium compounds; optimisation; power field effect transistors; silicon; silicon compounds; wide band gap semiconductors; zero voltage switching; GaN; GaN power FET; PWM ZVS topology; Si; SiC; ZVS conditions; power losses optimization; substantial Coss behavior; super-junction Si; wide bandgap SiC; Equations; Field effect transistors; Gallium nitride; Silicon; Silicon carbide; Switches; Zero voltage switching; Gallium Nitride (GaN); MOSFET; Silicon Carbide (SiC); Soft Switching; Super Junction Devices; ZVS Converters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
  • Conference_Location
    Lappeenranta
  • Type

    conf

  • DOI
    10.1109/EPE.2014.6911047
  • Filename
    6911047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=256011