Title :
A compact, fully differential D-band CMOS amplifier in 65nm CMOS
Author :
Xu, Zhiwei ; Gu, Qun Jane ; Ku, Ining ; Chang, Mau-Chung Frank
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
A fully differential 144GHz CMOS amplifier has been demonstrated in 65nm CMOS. It validates a maximum 20dB power gain and has positive gain over 38GHz frequency range from 126GHz to 164GHz. With stacking circuit architecture, the amplifier can tolerate up to 2V supply without reliability concern. It also delivers over 5.7dBm saturated output power with PldB of 5dBm under a 2V supply. The amplifier features a 3-stage common-source cascode architecture with on-chip interstage matching. The chip occupies 0.05 mm2 area and draws 39mA and 51mA from 1.4V and 2V supplies respectively. To our best knowledge, this amplifier achieves the highest power gain for CMOS amplifier beyond 100GHz and paves the way for D-band radar and passive imaging system applications.
Keywords :
CMOS integrated circuits; differential amplifiers; radar imaging; 3-stage common-source cascode architecture; current 39 mA; current 51 mA; differential D-band CMOS amplifier; frequency 126 GHz to 164 GHz; frequency 144 GHz; gain 20 dB; on-chip interstage matching; passive imaging system; radar imaging system; size 65 nm; stacking circuit architecture; voltage 2 V; CMOS integrated circuits; CMOS technology; Capacitors; Couplings; Gain; Logic gates; Resistance;
Conference_Titel :
Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-8300-6
DOI :
10.1109/ASSCC.2010.5716614
