DocumentCode
2560259
Title
Progress on MBE grown type-II superlattice photodiodes
Author
Hill, C.J. ; Li, J.V. ; Mumolo, J.M. ; Gunapala, S.G.
Author_Institution
Jet Propulsion Laboratory, California Inst. of Technol., Pasadena, CA
fYear
0
fDate
0-0 0
Firstpage
25
Lastpage
26
Abstract
The paper reports on the status of type-II superlattice diodes grown and fabricated for infrared absorption in the mid- and long wavelength infrared ranges. Recent progress in epitaxial regrowth as a passivation method and progress on long-wavelength imaging array fabrication are also presented
Keywords
infrared sources; molecular beam epitaxial growth; optical fabrication; passivation; photodiodes; semiconductor growth; semiconductor superlattices; MBE; infrared absorption; long-wavelength imaging array fabrication; passivation; type-II superlattice photodiodes; Infrared detectors; Laboratories; Optical design; Optical imaging; Optical superlattices; Photodiodes; Propulsion; Sensor arrays; Solid state circuits; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location
Quebec City, Que.
Print_ISBN
1-4244-0090-2
Type
conf
DOI
10.1109/LEOSST.2006.1694050
Filename
1694050
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