Title :
Mid infrared InP-based photodiodes operating at/near room temperature
Author :
Holmes, A., Jr. ; Sidhu, R.
Author_Institution :
Texas Univ., Austin, TX
Abstract :
This research aims to develop InP-based devices as alternative for MWIR detection. The approach pursued is a type-II superlattice consisting GaInAs and GaAsSb alloys. These structures provide two advantages for MWIR detection: large (greater than 700 meV) direct band-gaps, which should lead to a lower thermal carrier generation rate and the ability to adjust the detection wavelength by changing the compositions of GaInAs and GaAsSb and their thickness, in the superlattice
Keywords :
III-V semiconductors; indium compounds; infrared detectors; p-i-n photodiodes; semiconductor superlattices; GaAsSb; GaAsSb alloy; GaInAs; GaInAs alloy; InP; midinfrared InP-based photodiodes; thermal carrier generation; type-II superlattice; Avalanche photodiodes; Dark current; Electromagnetic wave absorption; Gallium arsenide; Gold; Lithography; Optical superlattices; PIN photodiodes; Temperature measurement; Wet etching;
Conference_Titel :
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location :
Quebec City, Que.
Print_ISBN :
1-4244-0090-2
DOI :
10.1109/LEOSST.2006.1694051
