• DocumentCode
    2560360
  • Title

    The HgCdTe electron avalanche photodiode

  • Author

    Beck, J. ; Wan, C. ; Kinch, M. ; Robinson, J. ; Mitra, P. ; Scritchfield, R. ; Ma, F. ; Campbell, J.

  • Author_Institution
    DRS Infrared Technol., Dallas, TX
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    36
  • Lastpage
    37
  • Abstract
    This paper reports results obtained on mid-wave, short-wave, and long-wave cutoff infrared Hg1-xCdxTe EAPDs that utilize a cylindrical "p-around-n", front side illuminated, n+/n-/p geometry that favors electron injection into the gain region. These devices are characterized by a uniform, exponential, gain voltage characteristic that is consistent with a hole-to-electron ionization coefficient ratio, of zero
  • Keywords
    II-VI semiconductors; avalanche photodiodes; cadmium compounds; infrared detectors; mercury compounds; HgCdTe; HgCdTe electron avalanche photodiode; electron injection; hole-to-electron ionization coefficient ratio; Avalanche photodiodes; Diodes; Electrons; Gain measurement; Microelectronics; Noise measurement; Optical noise; Optical scattering; Predictive models; Pulse measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Summer Topical Meetings, 2006 Digest of the
  • Conference_Location
    Quebec City, Que.
  • Print_ISBN
    1-4244-0090-2
  • Type

    conf

  • DOI
    10.1109/LEOSST.2006.1694056
  • Filename
    1694056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2560360