A 60GHz Class-E Power Amplifier in SiGe

Author

Valdes-Garcia, Alberto ; Reynolds, Scott ; Pfeiffer, Ullrich R.

Author_Institution

IBM, Yorktown Heights

fYear

2006

fDate

13-15 Nov. 2006

Firstpage

199

Lastpage

202

Abstract

A millimeter-wave Class-E tuned power amplifier is realized in 0.13 mum SiGe BiCMOS technology. To accomplish switching-mode operation at 60GHz, the transmission line input impedance transformation network provides a low real source impedance rather than optimum power match. The prototype IC is a single-ended single stage design that operates from a 1.2V supply and employs an area of 0.98mm². Measurement results show a saturated output power >11.1dBm with peak PAE>15% from 55-60GHz. At 58GHz it achieves a peak PAE of 20.9%, peak power gain of 4.2dB and saturated output power of 11.7dBm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; millimetre wave power amplifiers; transmission line theory; SiGe; SiGe - Interface; SiGe BiCMOS technology; class-e power amplifier; frequency 55 GHz to 60 GHz; gain 4.2 dB; millimeter-wave power amplifier; saturated output power; size 0.13 mum; switching-mode operation; transmission line input impedance transformation network; voltage 1.2 V; BiCMOS integrated circuits; Germanium silicon alloys; Impedance; Millimeter wave technology; Power amplifiers; Power generation; Power measurement; Power transmission lines; Prototypes; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian

Conference_Location

Hangzhou

Print_ISBN

0-7803-9734-7

Electronic_ISBN

0-7803-97375-5

Type

conf

DOI

10.1109/ASSCC.2006.357885

Filename

4197624