Title :
A low-power Mandarin-specific hearing aid chip
Author :
Wei, Cheng-Wen ; Kuo, Yu-Ting ; Chang, Kuo-Chiang ; Tsai, Cheng-Chun ; Lin, Jihi-Yu ; FanJiang, Yi ; Tu, Ming-Hsien ; Liu, Chih-Wei ; Chang, Tian-Sheuan ; Jou, Shyh-Jye
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This paper presents a digital hearing aid chip designed for Mandarin user to enhance speech quality and intelligibility. The hearing aid consists of an 18 subbands analysis and synthesis filter bank, insertion gain stage, and three channels wide dynamic range control for the new Mandarin-specific auditory compensation algorithm. A noise reduction block based on multiband spectral subtraction and enhanced entropy voice activity detection is also included to enhance quality. We reduce the power consumption of these algorithms through algorithmic and architecture optimization. In addition, for the data storage requirement, a low power SRAM that can operate at 0.6V and below is developed. Moreover, several strategies such as multi-clock domain, bypass mode, and voltage scaling are also adopted for power reduction. The chip measurement shows that the hearing aid consumes 314uW at 0.6V.
Keywords :
SRAM chips; biomedical electronics; biomedical equipment; biomedical measurement; channel bank filters; hearing aids; noise; power consumption; Mandarin-specific auditory compensation algorithm; algorithmic optimization; architecture optimization; bypass mode; data storage requirement; digital hearing aid chip; enhanced entropy voice activity detection; filter bank; insertion gain stage; low power SRAM; low-power Mandarin-specific hearing aid chip; multiband spectral subtraction; noise reduction; power consumption; power reduction; three channel wide dynamic range control; voltage scaling; Algorithm design and analysis; Auditory system; Computer architecture; Filter bank; Hearing aids; Noise reduction; Random access memory;
Conference_Titel :
Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-8300-6
DOI :
10.1109/ASSCC.2010.5716623