• DocumentCode
    2560512
  • Title

    An InGaAs/InP photodiode with 600 mW RF output power

  • Author

    Duan, Ning ; Li, Ning ; Demiguel, Stephane ; Campbell, Joe C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    52
  • Lastpage
    53
  • Abstract
    We report an InGaAs/InP charge compensated uni-traveling-carrier photodiode with thick depletion region with RF output power of 600 mW at 2 GHz
  • Keywords
    III-V semiconductors; charge compensation; gallium arsenide; indium compounds; microwave photonics; photodiodes; 2 GHz; 600 mW; InGaAs-InP; InGaAs/InP photodiode; charge compensation; thick depletion region; Bandwidth; Electrical resistance measurement; Indium gallium arsenide; Indium phosphide; Optical films; Photodiodes; Power generation; Power measurement; Radio frequency; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Summer Topical Meetings, 2006 Digest of the
  • Conference_Location
    Quebec City, Que.
  • Print_ISBN
    1-4244-0090-2
  • Type

    conf

  • DOI
    10.1109/LEOSST.2006.1694064
  • Filename
    1694064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2560512