• DocumentCode
    2560543
  • Title

    Design of very low dark current SWIR PIN arrays

  • Author

    Boisvert, Joseph ; Isshiki, Takahiro ; Sudharsanan, Rengarajan ; Yuan, Ping ; McDonald, Paul

  • Author_Institution
    Spectrolab Inc., Boeing Co., Seattle, WA
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    54
  • Lastpage
    55
  • Abstract
    Two approaches to reducing the dark current are presented to modify the epitaxial material to reduce the bulk diffusion dark current and to modify the PIN design to minimize the impact of generation current. In addition, material and device characterization data that contrast these approaches to the earlier conventional approaches will be discussed
  • Keywords
    arrays; current density; dark conductivity; p-i-n photodiodes; semiconductor device models; SWIR PIN array design; dark current; epitaxial material; generation current; Application specific integrated circuits; Buffer layers; Dark current; Detectors; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; Photonic integrated circuits; Sensor arrays; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Summer Topical Meetings, 2006 Digest of the
  • Conference_Location
    Quebec City, Que.
  • Print_ISBN
    1-4244-0090-2
  • Type

    conf

  • DOI
    10.1109/LEOSST.2006.1694065
  • Filename
    1694065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2560543