DocumentCode :
2560543
Title :
Design of very low dark current SWIR PIN arrays
Author :
Boisvert, Joseph ; Isshiki, Takahiro ; Sudharsanan, Rengarajan ; Yuan, Ping ; McDonald, Paul
Author_Institution :
Spectrolab Inc., Boeing Co., Seattle, WA
fYear :
0
fDate :
0-0 0
Firstpage :
54
Lastpage :
55
Abstract :
Two approaches to reducing the dark current are presented to modify the epitaxial material to reduce the bulk diffusion dark current and to modify the PIN design to minimize the impact of generation current. In addition, material and device characterization data that contrast these approaches to the earlier conventional approaches will be discussed
Keywords :
arrays; current density; dark conductivity; p-i-n photodiodes; semiconductor device models; SWIR PIN array design; dark current; epitaxial material; generation current; Application specific integrated circuits; Buffer layers; Dark current; Detectors; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; Photonic integrated circuits; Sensor arrays; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location :
Quebec City, Que.
Print_ISBN :
1-4244-0090-2
Type :
conf
DOI :
10.1109/LEOSST.2006.1694065
Filename :
1694065
Link To Document :
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